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| www.irf.com 1 automotive grade pd - 97682 hexfet ? power mosfet AUIRLZ44Z features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * s d g g d s gate drain source absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. additional features of this design are a 175c junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as(thermally limited) single pulse avalanche energy mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.87 r cs case-to-sink, flat greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 -55 to + 175 300 10 lbf in (1.1n m) 80 0.53 16 max. 51 36 204 110 78 see fig.12a, 12b, 15, 16 to-220ab AUIRLZ44Z s d g d v (br)dss 55v r ds(on) typ. 11m max. 13.5m 1
2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.166mh r g = 25 , i as = 31a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population, starting t j = 25c, l = 0.166mh, r g = 25 , i as = 31a, v gs =10v. r is measured at t j approximately 90c. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ( / . 0.0 / ( 11 1. 0 . ( 1.0 .0 0 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 24 36 q gs gate-to-source charge ??? 7.5 ??? nc q gd gate-to-drain ("miller") charge ??? 12 ??? t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 160 ??? t d(off) turn-off delay time ??? 25 ??? ns t f fall time ??? 42 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 1620 ??? c oss output capacitance ??? 230 ??? c rss reverse transfer capacitance ??? 130 ??? pf c oss output capacitance ??? 860 ??? c oss output capacitance ??? 180 ??? c oss eff. effective output capacitance ??? 280 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 51 (body diode) a i sm pulsed source current ??? ??? 204 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 21 32 ns q rr reverse recovery charge ??? 16 24 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 5.0v, i d = 30a v gs = 4.5v, i d = 15a v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 44v, ? = 1.0mhz v ds = 25v, i d = 31a i d = 31a v ds = 44v v gs = 16v v gs = -16v conditions v gs = 5.0v v dd = 50v i d = 31a r g = 7.5 1 0 t j = 25c, i f = 31a, v dd = 28v di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 31a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. conditions v gs = 5.0v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 0v, v ds = 0v to 44v www.irf.com 3 qualification information ? to-220ab n/a charged device model class c5(+/- 1125v ) ??? (per aec-q101-005) qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level rohs compliant yes esd machine model class m4(+/- 425v ) ??? (per aec-q101-002) human body model class h1c(+/- 2000v ) ??? (per aec-q101-001) ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0 1020304050 i d, drain-to-source current (a) 0 20 40 60 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380 s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 3.0v vgs top 15v 10v 8.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 175c 3.0v vgs top 15v 10v 8.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs , gate-to-source voltage (v) 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 20v 60 s pulse width t j = 25c t j = 175c www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1020304050 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v vds= 28v vds= 11v i d = 31a 0.2 0.6 1.0 1.4 1.8 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec a nce 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t j , junction temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.736 0.000345 0.687 0.00147 0.449 0.007058 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 5.0v www.irf.com 7 q g q gs q gd v g charge fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 80 160 240 320 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.7a 5.7a bottom 31a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 31a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 www.irf.com 9 v ds 90% 10% v gs t d(on) t r t d(off) t f 1 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms fig 17. for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ! " # ? $ % &'& & ? " (( ? &'& & ) $ ' 10 www.irf.com note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab packages are not recommended for surface mount application. ! " # $ www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity AUIRLZ44Z to-220 tube 50 AUIRLZ44Z 12 www.irf.com ! " #$% & ' ( ! $ ) * ! * ! + ( ( & ! ,& ( ! ! ! + - ( ! ! . ! ! ) ! & ! ! - ) ! / 0 - 0 & ) - ! 1 2 $ 2$ / 2$ ( ! 0 2$ . ( 0 * ( ! /1'+/ 34565 ( #$%! 0 . ( ! %&'(( (' &# ) %&'& & %(*++,,,- .- + %&'/&.+ !" # !$ # %&' ()*+&&,- |
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